摘要
ITC-IGBT是新一类IGBT,它在PT-IGBT结构基础上,在集电区近集电结附近引入一局域载流子寿命控制(LCLC)层,只要该层内载流子寿命足够低,则LCLC层对其以下衬底内的空穴具有"屏蔽"作用,从而使集电区范围变窄、集电区电子有效扩散长度减小,可使器件集电区由非透明变成内透明。本论文首次对600V平面栅内透明集电极IGBT(ITC-IGBT)的温度特性进行了仿真研究,并与传统PT-IGBT进行了比较。仿真结果表明,ITC-IGBT不仅技术折衷曲线明显优于PT-IGBT,且电流零温度系数点以及关断损耗随温度的增加率也比PT-IGBT要低,这说明ITC-IGBT不仅具有优良的电参数指标,同时具有良好的热稳定性。是一类颇具潜力的低压快速IGBT。
ITC-IGBT is a new type of IGBT. Its structure is quite similar to that of the PT-IGBT, but a very low local carrier lifetime control （LCLC） region is introduced in the collector region near the p-collector/n-buffer junction. If the carrier lifetime in LCLC region is short enough, LCLC region can screen the hole injection from the P＋ substrate underneath the LCLC layer. This makes the effective range of collector narrower and the effective electron diffusion length shorter. Thus, the non-transparent collector can turn into internally transparent. In this paper, device temperature characteristic simulation has been performed for the 600V planar gate Internal Transparent Collector IGBT （ITC-IGBT） for the first time. Performance comparisons between ITC-IGBTs and PT-IGBTs have also been carried out. Simulation results show that the ITC- IGBT not only has a better trade-off curve than PT-IGBT, but also lower JZTC （Current density at Zero Temperature Coefficient） and lower Er （Relative increment of turn-off lose due to temperature increment ）. This indicates that while offering a better electrical performance, the ITC-IGBT also shows better thermal stability. ITC-IGBT promises better potential for low voltage fast switching classes.
出处
《电力电子》
2010年第2期56-60,共5页
Power Electronics
