摘要
在真空或惰性气体中制备的硅量子点发光很弱,硅量子点表面被氢较好钝化后的发光也不强.硅量子点表面的硅氧键或硅氮键能破坏这种钝化并在带隙中形成局域电子态,在局域电子态对应的激活中心有很强的发光.可以用这种方式构建发光物质,控制硅量子点表面的键合可获得不同波长的发光.在硅量子点的发光激活处理过程中,退火是很重要的环节.对于硅量子点发光激活的机理,本文给出了相应的物理模型.实验证明,在600和700 nm波长附近观察到了激活硅量子点的受激发光,在1500 nm到1600 nm波长范围观察到了激活硅量子点的较强发光.
The emission of silicon quantum dots is weaker when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dot can break the passivation to form the localized electronic state in band gap to generate active center where the stronger emission occurs. In this way we can build up the radiative matter for emission. Controlling the surface bonds on silicon quantum dots, various wavelengths of emission can be obtained. The annealing is important for the treatment of the activation. Experiments demonstrate that the stimulated emissions at about 600 nm and 700 nm appear on active silicon quantum dots, and the photoluminescence peaks are found in a range from 1500 nm to 1600 nm.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第21期237-243,共7页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60966002,11264007)资助的课题
复旦大学表面物理国家重点实验室对该课题的支持~~
关键词
发光的激活
硅量子点
局域态
Si quantum dots
activation for emission
localized states
