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电子器件氧化层ESD介质击穿物理模型研究 被引量:4

Research on Physical Model of ESD Dielectric Breakdown in IC Silicon Dioxide Films
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摘要 提出了电子器件门电路硅氧化层介质击穿的物理模型。并使用该模型讨论了介质击穿场强与介质厚度的关系 ,解释了介质击穿电压与ESD(静电放电 ,electrostaticdischarge)脉冲的尺寸效应。 This paper presents a physical model of ESD dielectric breakdown in IC silicon dioxide films, discusses the dependence between dielectric breakdown field strength and dielectric thickness by using this model, and analyzes the size effect of the dielectric breakdown voltage and ESD pulses.
出处 《上海海运学院学报》 北大核心 2003年第1期56-59,共4页 Journal of Shanghai Maritime University
关键词 氧化层 介质击穿 ESD技术 dioxide films dielectric breakdown ESD technology
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参考文献8

  • 1Distefano T H, Shatzkes M. Dielectric Instability and Breakdown in SiO2 Thin Tilm[J]. J. Vac. Sci. Technol., 1976(13):50-54. 被引量:1
  • 2O'Dwyer J. J. Theory of High Field Conduction in A Dielectric[J], J. Appl. Phys., 1969 (39) : 3887 - 3890. 被引量:1
  • 3Dimaria D J, etc, Impact Ionization and Positive Charge Formation in Silicon Dioxide Films on Silicon, Appl. Phys. lett.,1992(60) :2118 - 2120. 被引量:1
  • 4Klein N, Solomon P. Current Runaway in Insulators Affected by Impact Ionization and Recombination[J], J. Appl. Phys.,1976(47):4364 - 4372. 被引量:1
  • 5Lin D L, Welsher T L, From Lightning to Charged-device Model Electrostatic Discharges[J]. EOS/ESD symp. Proc.,EOS- 14, 1992, 68 - 75. 被引量:1
  • 6孙可平,等.电子器件热击穿物理模型研究[M].南海出版公司,2002.6,6—10. 被引量:1
  • 7Ward A L. Calculation of Electrical Breakdown in Air at Nearatomspheric Pressure, Phys. Rek., 1965 (138):1357 - 1362 被引量:1
  • 8Lin D L. Electron Multiplication and Electrostatic Discharge Wave Forms[J], J. Appl. Phys., 1992(71) :2580 - 2586. 被引量:1

同被引文献12

  • 1刘长卫.LCD大电流的形成原因及预防[J].现代显示,2004(5):41-42. 被引量:1
  • 2[1]Bensen K E, Kimerling L C and Panousis P T. Reaching the limits in silicon processing [ J ]. AT&T Tech. J.,1990,69(6) :16:31. 被引量:1
  • 3[2]Apte P P,Kubota T and Saraswat K C. Constant current stress breakdown in ultrathin SiO2 films [ J ]. J. Electrochem. Soc., 1993,140:770 - 773. 被引量:1
  • 4[3]Tunnicliffe M J, Dwyer V M and Capbell D S. Experimental and theorical studies of EOS/ESD oxide breakdown in unprotected MOS structures [ A ]. EOS/ESD Proc[ C]. 1990,512:162 - 168. 被引量:1
  • 5[6]Schuegraf K F and Hu C. Hole injection oxide breakdown model for very low voltage lifetime extrapolation [ A].Proc. Int. Reliability Physics Symp[C]. 1993.7 - 12. 被引量:1
  • 6[2]Amerasekera E A,Campbell D S. ESD pulse and conditions voltage breakdown in MOS capacitor structures[A]. In: EOS/ESD Symp. Proc., EOS-8[C]. 1986:208-213. 被引量:1
  • 7[3]Tunnicliffe M J, Dwyer V M,Campbell D S. Experimental and theoretical studies of EOS/ESD oxide breakdown in unprotected MOS structures [A]. In: EOS/ESD proc., EOS-12[C]. 1990: 162-168. 被引量:1
  • 8[4]Apte P P,Kubota T,Saraswat K C. Constant current stress breakdown in ultrathin SiO2 films[J]. J.Electrochem.Soc., 1993,140:770-773. 被引量:1
  • 9[5]Dimaria D J,Arnold D,Cartier E. Impact ionization and positive charge formation in silicon dioxide films on silicon[J]. Appl.Phy.Lett.,1992,60:2118-2120. 被引量:1
  • 10[6]Lin D L,Welsher T L. From lightning to charged-device model electrostatic discharges[A]. In: EOS/ESD Symp.Proc., EOS-14[C]. 1992:68-75. 被引量:1

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