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红外焦平面阵列非均匀性多点实时压缩校正研究 被引量:1

Study on Real-time Multi-points Compressive Nonuniformity Correction of IRFPA
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摘要 非均匀性校正是提高红外图像质量的主要方法之一。针对传统的多点校正方法运算量大、实时性能差等缺点,提出多点实时压缩校正新方法,该方法将校正曲线相同或相似的不同探测单元归为一类,并将归类后的校正曲线的映射表存储在查找表中,校正过程中仅对查找表中的数据进行实时读取。实验结果表明:该算法计算量小、校正速度快,更加适合硬件实时实现。 Nonuniformity correction is one of the main methods that can improve the quality of infrared image. Aiming at the problem of the large data storing and poor real-time capacity of traditional multi-point correction, a new multi-points compressive correction method is proposed. Detector pixels with identical or similar calibration curve will be classified as a class, and the mapping table of the categorized correction curves will be stored in a look-up table. During the correction process, only the data in the look-up table is read in real-time. The experimental results show the algorithm has less computation and requires less storage space of data, which is more suitable for real-time hardware implementation.
出处 《红外技术》 CSCD 北大核心 2012年第10期593-597,共5页 Infrared Technology
基金 国家自然科学基金项目(编号:61071196) 教育部新世纪优秀人才支持计划 编号:NCET-10-0927 信号与信息处理重庆市市级重点实验室建设项目 编号:CSTC 2009CA2003 重庆市自然科学基金项目 编号:CSTC 2009BB2287 CSTC 2010BB2398 CSTC 2010BB2411 重庆市科技攻关计划项目 编号:CSTC 2011AB2008
关键词 红外图像 非均匀性 实时性 多点压缩校正 infrared image, nonuniformity, real-time capability, multi-points compression and correction
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  • 1江海,吕坚,徐建华,蒋亚东.基于动态元件匹配的CMOS集成温度传感器设计[J].Journal of Semiconductors,2007,28(11):1824-1829. 被引量:3
  • 2Lv Jian,Jiang Y D,Zhang D L. An ultra low noise readout integrated circuit for uncooled microbolometer[J].Analog Integr Circ Sig Process,2010.489-494. 被引量:1
  • 3Dereniak E L,Boreman G D. Infrared detectors and systems[M].New York:John Wiley&Sons,Inc,1996. 被引量:1
  • 4Wood R A. Monolithic silicon microbolometer arrays[J].{H}SEMICONDUCTORS AND SEMIMETALS,1997.43-121. 被引量:1
  • 5Lim Seunghyun,Lee Jeonghwan,Kim Dongsoo. A high-speed CMOS image sensor with column-parallel two-step single-slope ADCs[J].{H}IEEE Transactions on Electron Devices,2009,(03):393-398. 被引量:1

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