摘要
基于本征吸收、扩展态输运观点,对表面光电压法(SPV)测量a-Si:H PIN结构Ⅰ层少子扩散长度作了理论推导。与传统的SPV法相比,考虑了空间电荷区宽度、样品厚度及背面势垒对测量结果的影响,绘出了测量条件和测量方法。用我们研制的测试系统进行了多项测量,对不同样品测得的扩散长度值在0.10—0.64μm之间。测试系统重复性好。
Based on intrinsic absorption and transportation in the extended states, the theory of measuring the minority-carrier diffusion length in a-Si:H films with PIN structure by surface photovoltage method is derived. Comparing with the traditional model, we investigate the effects of depletion region width, sample thickness, and the presence of back barrier on SPV plot. The measurement conditions and methods are given. The diffusion lenngth measured on our aparatus is in the range of 0.10-0.65μm, revealling a good repeatability.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1990年第2期170-178,共9页
Acta Energiae Solaris Sinica
