摘要
为了降低材料的二次电子发射系数,本文对高导电无氧铜(OFHC,简称无氧铜)进行离子束表面改性处理,并研究其最优工艺条件,重点考查了温度、时间等工艺参数对表面形貌以及二次电子发射系数(δ)的影响。利用扫描电镜、能谱仪等对表面形貌及成分进行分析并在此基础上对改性后样品的表面形貌形成机理进行了初步探讨。实验得出最佳工艺为:在600℃下离子束改性处理1 h。该参数下处理的无氧铜样品的二次电子发射系数降低63.5%。
The surfaces of the oxygen free high conductive（OFHC） copper were modified with argon ion sputtering to lower its secondary electron emission coefficient, δ. The impacts of the modification conditions, including the temperature, ion energy and sputtering time, on the secondary electron emission were evaluated. The microstructures of the surface modified OFI-IC copper were characterized with scanning electron microscopy and energy dispersive spectroscopy. The resuits show that the surface modification under optimized conditions significantly lowers the emission coefficient δ. For example,at 600℃ and sputtered for 1 h, δ was found to decrease by 63.5%, possibly because of the surface roughening caused by argon ion sputtering.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第10期861-866,共6页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金重点项目(No.60931001)
关键词
无氧铜
离子束表面改性处理
二次电子发射系数
表面形貌
OFHC, Ion surface modification, Secondary electron emission coefficient, Surface topography
