摘要
量子阱红外探测器(QWIP)阵列具有重要的实用意义。国外的研究已经相当成熟,但是在国内,量子阱红外探测器阵列的研究水平还较低,尤其是对于双色量子阱红外探测器阵列的研究更是刚刚起步。文中使用GaAs/AlGaAs、InGaAs/AlGaAs应变量子阱和三端电极引出的器件结构研制出128×128中/长波双色量子阱红外探测器阵列。该结构实现了同像元同时引出双色信号。器件像元中心距为40μm,像元有效面积为36μm×36μm。探测器芯片与读出电路互连并完成微杜瓦封装。在65 K条件下测试,峰值波长为:中波5.37μm,长波8.63μm,器件的平均峰值探测率为:中波4.75×109cmHz1/2W-1,长波3.27×109cmHz1/2W-1。并进行了双波段的红外演示成像。
Quantum well infrared photodetector（QWIP） array has practical significance.The research abroad is already quite mature.However,the research of QWIP array is still on a relatively low level at home,especially for two-color QWIP array,which is just beginning.In this paper,a 128×128 mid and long-wavelength dual-band QWIP array was developed using GaAs/AlGaAs and InGaAs/AlGaAs strained quantum wells and tree electrodes structure.This structure realized that a pixel could leads to two color signals at the same time.The pitch of the array was 40 μm with the pixel size of 36 μm×36 μm.A detector array was hybridized to a readout circuit and installed into a micro Dewar.At 65 K,the average peak detectivity Dλ＊ is 4.75×109 cmHz1/2W-1 for the mid-wavelength with peak wavelength of 5.37 μm and 3.27×109 cmHz1/2W-1 for the long-wavelength with peak wavelength of 8.63 μm.The infrared demonstration images were obtained in both mid and long-wavelength band.
出处
《红外与激光工程》
EI
CSCD
北大核心
2012年第9期2249-2252,共4页
Infrared and Laser Engineering
关键词
红外探测器
量子阱
双色
infrared photodetector
quantum well
dual-band
