摘要
首次采用不同偏压下的光伏谱方法无损测量到双势垒量子阱红外探测器结构的量子阱带间跃迁光伏谱响应．分析结果支持探测器有源区存在内建电场的说法：量子阱区存在由生长不对称引起的指向衬底的内建电场，同时势垒区存在相反的内建电场．
Abstract Using photovoltaic spectra technique we investigated band-to-band photoresponse under different bias in double barrier quantum well IR photodetectors. The results support the assumption that during MBE growth some asymmetry may be introduced and a built-in electric field pointing to the substrate in the well regions is induced and has an opposite polarity across the AlGaAs barrier regions.
基金
中国科学院院长基金
关键词
双势垒量子阱
红外探测器
光伏响应
Infrared detectors
Molecular beam epitaxy
Photovoltaic effects
Semiconducting gallium compounds
