摘要
建立电感耦合等离子体-质谱法(ICP-MS)测定工业硅中痕量B和P的分析方法。采用HF-HNO3混合酸处理样品,对仪器工作参数进行优化,以Rh为校正内标,有效克服了基体效应及多元素分子离子干扰。分析结果表明,方法的检出限为:B为2.0μg.L-1、P为8.5μg.L-1,B和P的加标回收率分别为:97.2%—103.6%、95.2%—102.8%,精密度分别为2.6%、3.5%。方法可准确、快速测定工业硅中痕量元素B和P。
An analytical method for determining the trace boron and phosphor in industrial silicon by inductively coupled plasma-mass spectrometry（ICP-MS） was established.The samples were digested with mixture of HF and HNO3.The operating conditions of the instrument were optimized,and element Rh was chosen as the internal standard,then matrix effect and multi-element molecular ion interference were effectively eliminated.The results were obtained as follows：the detection limit of method were 2.0μg·L^-1（for B）and 8.5μg·L^-1（for P）,the recoveries of samples were in the range of 97.2%—103.6%（for B）and 95.2%—102.8%（for P）and the RSDs were 2.6%（for B）and 3.5%（for P）.The method can be applied to accurately and fast determining the trace elements B and P in industrial silicon.
出处
《光谱实验室》
CAS
CSCD
2012年第5期2952-2955,共4页
Chinese Journal of Spectroscopy Laboratory
基金
云南省科技平台项目(2010DH025)
国家自然科学基金面上项目(41173124)
云南省应用基础研究项目(2009ZC017M)
