摘要
为消除运算放大器失调电压对带隙电压精度的影响,采用NPN型三极管产生ΔVbe,并设计全新的反馈环路结构产生了低压带隙电压.电路采用SMIC 0.18μm CMOS工艺实现,该新型低压带隙基准源设计输出电压为0.5V,温度系数为8ppm/℃,电源抑制比达到-130dB,并成功运用于16位高速ADC芯片中.
The offset voltage of the OP directly influences the precision of the output voltage reference. To cancel the offset voltage, this paper adopts NPN to produce AVbe and designs a new feedback loop structure to produce a low voltage bandgap reference. The circuit is designed in SMIC 0. 18/μm CMOS process. The temperature coefficient of this low voltage bandgap reference is 8 ppm/°C. The PSRR is -130 dB and the design output voltage is 0.5 V. The circuit has been successfully applied at a high speed, 16 bit ADC.
出处
《湖南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2012年第8期48-51,共4页
Journal of Hunan University:Natural Sciences
基金
湖南省自然科学基金资助项目(11JJ2034)
关键词
带隙基准电压源
低压
正温度系数
负温度系数
电源抑制比
bandgap voltage reference~ low voltage ~ positive temperature coefficient ~ negative tempera-ture coefficient~ power supply rejection ratio
