摘要
提出了一种电路结构简单的分段线性补偿方法。不同分段子区间复用一个PTAT电路架构，通过调节外部增加的较少其它电路参数来实现多个补偿电流，采用该复用方法，增加一次分段区间，仅需增加5个MOS管、一个BJT和一个电阻。与一般的分段线性补偿电路相比，所需的MOS器件和BJT器件大大减少了，易于扩展。将该电路应用于一款Boost升压芯片的带隙基准源中，在一40～120℃的温度区间分三个子区间进行线性补偿，采用JAZZ BCD05 2P3M BiCMOS工艺实现，仿真结果表明，在整个温度范围，温漂可达到5.85×10^-7/℃，实现了很高的精度。
This paper introduce a high precision bandgap voltage reference with a piecewise-linear-compensating circuit which is an easily extended structure. Compared to traditional piecewise linear compensating circuit, we only use 5 CMOS transistors and one BJT transistor to implement a new temperature sub-range compensating circuit. This can simplify the whole circuits especially when we need to get several sub-ranges. This circuit is used in one Boost chip which is signed off successefully with JAZZ BCD05 2P3M BiCMOS technology. According to the testing, the temperature coefficient is up to 5.85×10^-7/℃ over the - 40℃ to 120℃ temperature range, temperature coefficient can be improved due to the simple circuit.
出处
《微电子学与计算机》
CSCD
北大核心
2008年第8期33-36,共4页
Microelectronics & Computer
基金
国家"八六三"计划项目(2006AA01Z226)
关键词
带隙基准
分段线性补偿
温漂系数
bandgap voltage reference
piecewise linearly compensated
temperature coefficient
