摘要
采用直流反应磁控溅射法制备了ITO透明导电薄膜,针对氧流量、溅射气压、溅射电流3种工艺参数对ITO薄膜电阻率和可见光区透射率的影响进行了分析和研究。结果表明:从ITO薄膜作为太阳电池用减反射层和电极出发,得到了工艺参数的优化值,分别为氧流量0.2 ml/min(标准状态),溅射气压3 Pa和溅射电流0.2 A,ITO薄膜的电阻率为3.7×10-3Ω.cm,透过率(550 nm)高达93.3%。另外,利用该优化工艺条件下制备的ITO薄膜作为电极和减反射层,制备了结构为ITO/n+-nc-Si∶H/-i nc-Si:H/p-c-Si/Ag的太阳能电池,电池开路电压Voc达到534.7mV,短路电流Isc达到49.24mA(3 cm2),填充因子为0.4228。
The indium-tin oxide（ITO） films were deposited by reactive DC magnetron sputtering on glass substrate.The impacts of the film growth conditions,such as the oxygen flow rate,pressure,sputter power,deposition rate,and substrate temperature,on the microstructures,electrical and optical properties of the ITO films were evaluated.The ITO films,to be used as the antireflection layer,electrode coatings of the solar cell,were grown under the following optimized conditions：oxygen flow rate of 0.2 ml/min,a pressure of 3 Pa,a sputtering current of 0.2 A,and its resistivity and transmittance（550 nm） were found to be 3.7×10-3 Ω·cm,and 93.3%,respectively.The solar cells,fabricated with the ITO/n＋-nc-Si∶H/i-nc-Si∶H/p-c-Si/Ag structure,possess the optimized specifications,including an open circuit voltage Voc of 534.7 mV,a short-circuit current Isc of 49.24 mA（3 cm^2）,and a fill factor FF of 0.4228.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第8期763-766,共4页
Chinese Journal of Vacuum Science and Technology
基金
北京工业大学博士启动基金资助项目(X0006015201101)
北京市自然科学基金项目(批准号4102014)
北京市人才强教深化计划资助项目
国家自然科学基金项目(批准号10804005)
关键词
ITO薄膜
直流磁控溅射
太阳电池
工艺参数
ITO films
DC magnetron reactive sputtering
Solar cells
Technical parameters
