摘要
材料的载流子浓度和迁移率是影响器件性能的关键因素,变温Hall测试结果证明杂质掺杂A1GaN中的载流子浓度和迁移率随温度降低而减小.然而极化诱导掺杂的载流子浓度和迁移率不受温度变化的影响.以准绝缘的GaN体材料作为衬底,在组分分层渐变的AlGaN中实现的极化诱导掺杂浓度仅仅在10^(17)cm^(-3)数量级甚至更低.本研究采用载流子浓度为10^(16)cm^(-3)量级的非有意n型掺杂GaN模板为衬底,用极化诱导掺杂技术在分子束外延生长的AlGaN薄膜材料中实现了高达10^(20)cm^(-3)量级的超高电子浓度.准绝缘的体材GaN半导体作衬底时,只有表面自由电子作为极化掺杂源,而非有意掺杂的GaN模板衬底除了提供表面自由电子外,还能为极化电场提供更多的自由电子"源",从而实现超高载流子浓度的n型掺杂.
Carrier concentration and mobility of materials are key factors affecting device performance. Hall tests at different temperatures demonstrate that the carrier concentration and mobility in impurity-doped AIGaN decrease with temperature decreasing. However, carrier concentration and mobility obtained by polarization-induced doping are independent of temperature. Using quasi-insulating GaN as substrate, the electron concentration obtained in the linearly graded AlGaN film through impurity-doping is only 10-17 cm-3 or less. In this study, using unintentional impurity doped （n-type, 10-16 cm-3） GaN template, graded A1GaN film is grown by molecular beam epitaxial, in which polarization induced ultra-high electron concentration is up to 10^20 cm-3 in graded AlGaN film without using any dopant. Using quasi-insulating GaN as substrate, only the surface of the free electrons serves as polarization dopant, while unintentionally doped GaN template is used as a substrate, in addition to free electrons on surface/interface, it is also reasonable to surmise more negative charges attracted by polarization electric field to be the source of polarization doping, in the unintentional doped GaN template, thereby achieving an ultra-high carrier concentration via polarization induced n-type doping.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第16期171-176,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:61101029)资助的课题~~
