摘要
用二次离子质谱 (SIMS)分析了低能注入 (1 5 0 ke V)砷在体材料碲镉汞中的深度分布和注入砷原子在碲镉汞中的热扩散情况 .砷在碲镉汞中的分布表现出复杂的多元扩散机制 .在缺陷密度 (EPD)比较低的碲镉汞材料中 ,砷扩散的主体符合恒定扩散系数的有限源扩散模型 ,呈现出浓度随深度的高斯分布 .而在缺陷密度比较大的碲镉汞材料中 ,砷的分布呈多段指数型分布 。
The arsenic distribution in bulk HgCdTe was analyzed and the thermal diffusion dynamics of arsenic was studied. All arsenic profiles exhibited complex components. In HgCdTe with low dislocation density (EPD), the main component is a Guassian like distribution and can be described by the Fick’s law with a constant diffusion coefficient with a limited source as the boundary condition. While in HgCdTe with high dislocation density, the arsenic distribution is complex, exhibiting multi component exponential distribution.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第4期281-284,共4页
Journal of Infrared and Millimeter Waves
关键词
碲镉汞
二次离了质谱
砷扩散
红外焦平面
HgCdTe, secondary ion mass spectrometry(SIMS), arsenic diffusion.
