摘要
研究了不同基质和栽培措施下,霍山石斛组培苗在温室内的生长情况。结果表明,在9种不同基质和4种不同栽培措施的处理下,霍山石斛的各项生长指标有显著差异(P=0.000 1<0.01)。(1)炼苗成活率:以C-f组合最高(96%),其次是C-g组合和D-f组合(92%)。(2)茎生长:新茎数以C-f组合为最高(36枝);茎高各处理差异不大,以C-f组最高(13.5 mm);茎粗以C-f和D-h组合表现较好。(3)根生长:新根数以C-f组合为最多(38.1根),其次C-g组合(36.7根);根长以C-g组合为最高(17 mm),其次C-d组合(16.9 mm);根粗以C-h和D-f组合(1.6 mm)为好。(4)苗木根茎比:以基质C-d组合为最高,其次是D-d、B-d。因此,在培育霍山石斛组培苗时,采取C处理(包根、喷施JT溶液)和f基质(树皮碎屑、米心石质量比2∶1)是提高炼苗成活率和促进苗木健康生长的最佳栽培措施。
The growth of Dendrobium huoshanense tissue culture plants with different substrates and cultivation measures in the greenhouse was studied in this paper. The results showed that there was significant difference of the growth indexes of D. huoshanense with 9 substrates and 4 cultivation measures （ P = 0. 000 1 〈 0. 01 ）. （ 1 ） The survival rate of hardening plants in C-f treating regime was the highest （ 96% ） , followed by C -g and D -f treating regimes （92%）. （2） Stem growth ： the number of new stem in C -f treating regime was the largest （36） ; there was no significant difference between the stem height among different treatments and the stem growth in C-f group was the highest （ 13.5 mm） ; Stem diameter in C-f and D-h treating regime was higher. （3） Root growth： the number of new roots in C-f group was the largest （ 38.1 ）, followed by C-g group （36.7） ; Root length in C-g group was the highest （17 ram）, followed by C-d group （16. 9 mm） ; root diameter in C-h and D-f groups was higher （1.6 mm）. （4） The ratio of root and stem in C-d group was the highest, followed by d-d and B-d. Therefore, in the process of cultivating D. huoshanense tissue culture plants,C treatment （packed root, spraying JT solution ） and f substrate was the optimal cultivation measure for improving the survival rate of hardening seedling and promoting plants healthy growth.
出处
《林业科技开发》
北大核心
2012年第4期112-115,共4页
China Forestry Science and Technology
基金
安徽省科技厅攻关项目"安徽省林业生态提升关键技术研究"(编号:10010302001)
中央财政林业科技其他推广示范资金项目"霍山石斛组培苗栽培技术推广示范项目"(编号:[2010]09号)
关键词
霍山石斛
基质
栽培措施
成活率
生长量
Dendrobium huoshanense
substrate
cultivation measure
survival rate
growth
