摘要
ZnSe宽带隙半导体光发射器件是未来全色光显示和高密度光记录用的重要器件。在相继完成材料、掺杂技术 ,以及器件结构相关的研究工作后 ,目前正在攻克器件实用化的关键技术———寿命。介绍了ZnSe的 p型和n型导电材料的控制技术及其LD和LED的开发进展。
Wide band-gap ZnSe semiconductor light-emitting devices have applications in future full-colour display and high-density optical recording, etc. Having succeeden in research on material growth, doping technology and device structures, the development has taken aim at increasing the lifetime which is a key factor for practice use.p- and n-ZnSe conduction controlled technology is described in the paper,as well as research work on the current status of diode lasers and light -emitting diodes.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第A03期19-24,共6页
Semiconductor Optoelectronics
