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激光直写制备薄膜铂电阻技术研究 被引量:4

Direct laser writing of thin platinum film resistors
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摘要 为了研究激光直写技术在制备薄膜铂电阻中的应用,采用激光直写制备了薄膜厚度为2μm的铂电阻。探讨了激光直写技术制备薄膜铂电阻的原理,以条形铂电阻为例,研究了激光参量对铂电阻形状的影响,在最优的激光脉冲频率18kHz、激光扫描速率100mm/s的参量下,制备了实际电阻约为0.37Ω的条形薄膜铂电阻,最后检验了薄膜铂电阻的电阻值。结果表明,铂电阻的宽度分别随激光脉冲频率和激光扫描速率的增大而增大;制备的电阻边缘整齐,表面平整,电阻实际值与理论值只有0.8%的相对误差,吻合很好。 In order to study the application of laser direct writing technology in the fabrication of thin platinum film resistors,platinum resistors in 2μm thick were manufactured by means of laser direct writing.The fabrication mechanism of thin platinum film resistors was discussed.Taking strip platinum resistors as an example,the effect of the laser parameters on the figures of platinum resistors was studied.A 0.37Ω strip thin platinum film resistor was manufactured under the condition that the optimal laser pulse repetition frequency was 18kHz and the laser scanning speed was 100mm/s.Finally,the resistance of the platinum resistors was tested.The results indicate that the width of platinum resistor increases with the increase of laser pulse frequency and the increase of laser scan frequency independently.The edge of the manufactured resistor is neat and the surface is smooth.The relative deviation of the actual resistance to the theoretical one is only 0.8%.
出处 《激光技术》 CAS CSCD 北大核心 2012年第3期379-381,共3页 Laser Technology
关键词 激光技术 薄膜铂电阻 激光直写 图形填充 扫描振镜 laser technique thin platinum film resistor laser direct writing graphic fills scanning galvanometer
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  • 1孙继凤,汤建华,郭晓光.激光调阻工艺参数对调阻精度的影响分析[J].应用激光,2004,24(3):139-141. 被引量:12
  • 2徐兵,魏国军,陈林森.激光直写技术的研究现状及其进展[J].光电子技术与信息,2004,17(6):1-5. 被引量:11
  • 3魏国军,邵洁,周小红,陈林森.用于二元光学器件制作的激光直写系统[J].光电子.激光,2006,17(10):1212-1215. 被引量:5
  • 4梁凤超,胡君,续志军.激光直写凹球面网栅的电控实现[J].光学精密工程,2006,14(5):792-796. 被引量:12
  • 5MANFRINATO V R, ZHANG L, SU D, et al. Resolution limits of electron-beam lithography toward the atomic scale[J]. Nano Letters, 2013, 13(4):1555-1558. 被引量:1
  • 6CHU C H, SHIUE C D, CHENG H W, et al. Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography[J]. Optics Express, 2010, 18(17):18383-18393. 被引量:1
  • 7LIU C P, HSU C C, JENG T R, et al. Enhancing nanoscale patterning on Ge-Sb-Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography[J]. Journal of Alloys and Compounds, 2009, 488(1):190-194. 被引量:1
  • 8WANG C, CHAN Y C, LAM Y L. Fabrication of diffractive optical elements with arbitrary surface-relief profile by direct laser writing[J]. Optical Engineering, 2002, 41(6):1240-1245. 被引量:1
  • 9LIU H I, DAI V, ZAKHOR A, et al. Reduced complexity compression algorithms for direct-write maskless lithography systems[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 2007, 6(1):013007. 被引量:1
  • 10LEE Y C, CHAO S, HUANG C C, et al. A compact optical pickup head in blue wavelength with high horizontal stability for laser thermal lithography[J]. Optics Express, 2013, 21(20):23556-23567. 被引量:1

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