摘要
硅基的光电子集成以及光集成将满足未来信息传输处理的要求。目前制作硅基激光器的方法主要分为两类 ,异质结外延生长和异质材料键合。键合方法克服了异质结外延生长不可避免的晶格失配和材料热膨胀系数非共容性的缺点 ,它可以将具有直接带隙结构的半导体材料(如Ⅲ -Ⅴ族材料 )键合到硅片上 ,从而制作出硅基键合激光器件。特别是近年来发展起来的低温 (小于 50 0℃ )直接键合技术 ,使发光器件与微电子器件的硅基混合光电集成成为可能。
Optoelectronic integrated circuits (OEICs) and photonic integrated circuits on silicon substrate will meet the needs of information transmission and processing in the future. At present there exist two kinds of manufacturing methods for silicon-based lasers,i.e.,heteroepitaxy and bonding.By bonding direct bandgap semiconductor materials (e. g. Ⅲ-Ⅴ compounds) are bonded to the silicon wafer,so that a laser can be made on a silicon substrate.Troubles such as lattice mismatch and incompatibility of thermal expansion coefficients existed during heteroepitaxy can be overcomed by this method. Especially, the direct bonding at low temperature developed in recent years will make hybrid integration of photonic devices with microelectronic devices possible.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第2期77-79,84,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目 !(6 97870 0 4)
国家自然科学重大基金资助项目!(6 9896 2 6 0 - 0 6
6 9990 5 40 )
关键词
半导体激光器
硅基键合
混合光电集成
semiconductor laser diode
Si-based bonding
hybrid optoelectronic integration
