摘要
采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对应的阈值电流密度和微分电阻分别为2.13kA/cm2和5.8Ω,在约220mA时输出光功率达15mW.
A 1.55μm InP-InGaAsP quantum-well laser was fabricated on Si substrate by low-temperature wafer bonding, which lases at room temperature with electrical pumping. The InP epitaxy was designed and grown by MOCVD, then bonded to Si wafer. Finally,the laser with ridge-waveguide and edge-emission was fabricated. This laser runs continuous-wave with a threshold current of 48mA （current density of 1.65kA/cm^2） ,differential resistance of 5.8W at the threshold current, and a maximum output power of 15mW at 220mA.
基金
国家高技术研究发展计划(批准号:2003AA312010)
国家自然科学基金(批准号:60576035)资助项目~~
关键词
硅基激光器
连续激射
直接键合
Si-based laser
continuous-wave lasing
wafer bonding
