摘要
通过在Sr2SiO4∶Eu2+荧光粉中加入MgO,提高了Sr2SiO4∶Eu2+荧光粉的蓝光和黄光发射带的发射强度,研究了MgO浓度对Sr2SiO4∶Eu2+荧光粉发光强度的影响。当Mg与Si的量比在1.0附近时,荧光粉的亮度较高,且发光颜色为白色。通过调节Sr2SiO4∶yEu2+,MgO荧光粉中Eu2+的掺杂浓度,可以调节荧光粉的发光颜色。用Sr2SiO4∶Eu2+,MgO和400 nm的InGaN管芯制备的白光LED,色坐标优于α'-Sr2SiO4∶Eu2+和β-Sr2SiO4∶Eu2+荧光粉制成的白光LED,显色指数和流明效率高于β-Sr2SiO4∶Eu2+和α'-Sr2SiO4∶Eu2+制成的白光LED。
MgO-doped Sr2SiO4：Eu^2＋ phosphors were synthesized. The introduction of MgO strongly enhances the blue and yellow emission intensity of Sr2SiO4：Eu^2＋ phosphors. The luminescence properties as a function of MgO and Eu^2＋ concentrations were studied. White, light emission phos- phors were obtained when the molar ratio of Mg and Si is around 1.0 under excitation of 400 nm. White light-emitting diode through the integration of InGaN near-UV chip and Sr2SiO4：Eu^2＋ , MgO phosphor was fabricated and exhibited better characteristic parameters than that of the α-Sr2SiO4： Eu2 ＋ and β-Sr2SiO4：Eu^2＋ phosphors.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2012年第4期389-393,共5页
Chinese Journal of Luminescence
基金
吉林省科技发展计划项目(201101106)
长春师范学院自然科学基金(长师院自科合字[2009]第007号
长师院自科合字政策[2010]第002号)资助项目
