摘要
本文以氧化镓、氧化锌和氨气为原料,通过常压化学气相沉积法(APCVD)在Au/Si(100)衬底上成功生长出了Zn掺杂的"Z"形GaN纳米线。利用场发射扫描电镜(FESEM)、X-射线衍射仪(XRD)、透射电子显微镜(TEM)、光致发光谱(PL)等测试方法对样品的形貌、晶体结构及光学性质进行了表征。结果表明:在温度为950℃,氧化镓和氧化锌的质量比为8∶1的条件下,制备出的Zn掺杂Z形GaN单晶纳米线直径为70 nm、长度为数十个微米,生长机理遵循VLS机制。Zn元素的掺杂使GaN纳米线在420 nm处出现了光致发光峰,发光性能有所改善。
High-purity Zn-doped GaN Zigzag nanowires were synthesized on the Au/Si（100） substrate by atmospheric pressure chemical vapor deposition method（APCVD） using gallium oxide,zinc oxide and ammonia as raw materials.Microstructures,morphology and photoluminescence property of the nanowires were characterized by field emission scan electron microscopy（FESEM）,X-ray diffractometry（XRD）,transmission electron microscopy（TEM） and photoluminescence spectroscopy（PL）.The result show that： When the temperature is 950 ℃ and the mass ratio of the reactants is Ga2O3∶ZnO=8∶1,a high density of Zn-doped GaN Zigzag nanowires was obtained.The diameter of single-crystal GaN nanowires was about 70 nm,and length was about several tens of micron.The growth mechanism of this kind followed VLS model.Furthermore,room-temperature photoluminescence of Zn-doped GaN nanowires shows emission peaks at 420 nm,and the luminescence property was improved.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第1期36-41,46,共7页
Journal of Synthetic Crystals
基金
山西省回国留学人员重点资助项目(2009-03)
