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元素掺杂对LED器件空间辐射性能的影响

Research on the radiation characteristic of the LED device in optical satellite communication system
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摘要 发光二极管(LED)是卫星光通信系统中重要的光源部件,它的工作性能直接影响着光通信系统的可靠性。对粒子辐照条件下LED器件的少数载流子寿命和输出光功率变化进行了深入的理论分析,依据理论分析展开数值模拟计算。结果表明,提高LED有源区Zn元素掺杂浓度可有效降低少数载流子的辐射寿命,在提高LED输出功率的同时有效提升器件的空间抗辐射性能。 The light emitting diode(LED) is one of the key components in the optical satellite communication system,whose performance determines the reliability of the communication system.The theoretical analysis of the minority carrier′s lifetime and output power of LED device under particle radiation is made.The numerical simulation is also done based on the theoretical analysis.The calculation results prove that the increase of the doped Zn density in the active area of LED can effectively decrease the radiative lifetime of the minority carrier and it also can improves the LED′s anti-radiation performance while heightening its output power.
出处 《激光与红外》 CAS CSCD 北大核心 2012年第1期68-71,共4页 Laser & Infrared
基金 国家高技术研究发展计划"863"项目(No.2007AA01Z294) 中国博士后科研基金项目(No.20090461466)资助
关键词 发光二极管 空间辐射 少数载流子寿命 输出功率 LED space radiation minority carrier lifetime output power
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  • 1肖志刚,唐本奇,李君利,张勇,刘敏波,王祖军,黄绍艳.中子辐照导致线阵电荷耦合器件电荷转移效率退化实验研究[J].原子能科学技术,2007,41(1):117-120. 被引量:6
  • 2Minden H T. Effects of proton bombardment on the properties of GaAs laser diodes[J]. Journal of Applied Physics, 1976,47(3) : 1090- 1094. 被引量:1
  • 3Kalavagunta A, Bo C, Neifeld M A, et al. Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasers[J]. IEEE Transactions on Nuclear Science, 2003,50(6) : 1982 -1990. 被引量:1
  • 4Paxton A H, Carson R F, Schone H, et al. Damage from proton irradiation of vertical-cavity surface emitting lasers[J]. IEEE Transactions on Nuclear Science, 1997,44(6) : 1893-1897. 被引量:1
  • 5Johnston A H. Proton displacement damage in light-emitting and laser diodes[J]. IEEE Transactions on Nuclear Science, 2001,48(5) : 1713- 1720. 被引量:1
  • 6Lee S C, Zhao Y F, Scb.rimpf R D, et al. Comparison of lifetime and threshold current damage factors for multi-quantum-well(MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies[J]. IEEE Transactions on Nuclear Science, 1999,46(6) : 1797-1803. 被引量:1
  • 7Zhao Y F, Patwary A R, Sehrimpf R D, et al. 200 MeV proton damage effects on multi-quantum well laser diodes[J]. IEEE Transactions on Nuclear Science, 1997,44(6) : 1898-1905. 被引量:1
  • 8Evans B D, Hager HE, Hughlock B W. 5. 5-MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broadband LED[J]. IEEE Transactions on Nuclear Science, 1993,40(6) : 1645-1654. 被引量:1
  • 9Messenge S R, Xapsos M A, Burke E A, et al. Proton displacement damage and ionizing dose for shielded devices in space[J]~. IEEE Transactions on Nuclear Science ,1997,44(6):2169-2173. 被引量:1
  • 10Johnston A H, Miyahira T F. Radiation degradation mechanisms in laser diodes[J]. IEEE Transactions on Nuclear Science, 2004,51(6): 3564-3571. 被引量:1

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