摘要
设计了一种应用于移动终端的InGaP/GaAs HBT功率放大器。该放大器采用了一种新颖的在片偏置电路技术,不仅避免了由于电源和温度变化导致的直流偏置点的不稳定,而且补偿了由于输入信号增大所引起的动态偏置点的偏离。电流镜结构的偏置电路与反馈电路使偏置电压维持在一个稳定的状态,在反馈电路中引入一个非反相电路加强了电路增益。通过在偏置管的基极并联一个反偏二极管改善了功率放大器的线性。芯片采用基板的封装形式进行测试,改善了功率放大器的散热条件。测试结果表明该放大器具有27.6 dBm的输出压缩点,对于W-CDMA应用,放大器的效率为34.1%,ACPR为-40.3 dBc。
A linear power amplifier （PA） with a new on-chip bias circuit is realized in an InGaP/GaAs HBT （heterojunction bipolar transistor） process. The bias circuit not only avoids the instability of DC bias caused by the change of the power supply and the temperature, but also compensates the deviations caused by the increase of the input power. The bias circuit, which is a current-mirror configuration, and the feedback circuit help to maintain the bias voltage at a constant level. The gain of the feedback circuit is enhanced by inserting a non-inverting amplifier. A shunt reverse-biased diode at the base node of the active bias transistor improves the linearity of the PA. The measurement is performed by the MMIC die bonded on an organic substrate and the effective thermal management further improves the performance of the PA. Measured results exhibit a 27.6 dBm output compression point, a 34. 1% PAE, and a- 40. 3 dBc ACPR for W-CDMA （Wide-band code division multiple-access） applications.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第1期40-44,共5页
Research & Progress of SSE
