摘要
本文系统地介绍了Si-PIN探测器对带电粒子、中子、射线的探测原理。针对灵敏面积为Φ30mm×420μm的Si-PIN探测器,详细地介绍了设计方法和工艺流程,并指出了影响探测器性能的关键工艺。采用离子注入和平面工艺不仅能够降低漏电流,提高探测器的能量分辨率,而且使得探测器对高温环境和真空都很稳定。最后初步介绍了探测器的电特性(I-V特性,C-V特性)的变化趋势,以及探测特性参数的测量方法。
The principle of Si-PIN semiconductor detector detecting charged particle,neutron and radiation are introduced systematically in this article.The design procedures and technology process of the detector whose sensitive area is Φ30 mm×420 μm are introduced.The key technologies which affect performance of the detector are also presented.The ion-implanted planar technology could reduce leakage current and enhance resolution of the detector as well as improves stability of the detector in high-temperature and vacuum environment.At last,I-V and C-V characteristics curves as well as detecting characteristic parameters are also introduced preliminarily.
出处
《真空电子技术》
2011年第6期47-50,共4页
Vacuum Electronics
