摘要
利用TCAD工具Medici模拟了宽基硅二极管快中子探测器在正向恒流状态时快中子的辐射剂量与其端电压的关系。建立PIN二极管辐照等效模型。通过模型求解和二维数值模拟软件medici仿真确定了模型的使用范围。分析研究了不同辐照剂量下基区电场的变化。
by making use of Medici tools of TCAD,the relationship between radiation dose of fast neutron and its terminal voltage when the PIN fast neutron detector is working in the constant current was studied.the equivalent model of PIN diode was established.the range of model use has been determined by solving model and simulation of two-dimensional numerical software medici.the electric field change under different irradiation doses were analyzed and studied.
出处
《微计算机信息》
2010年第25期126-128,共3页
Control & Automation
