摘要
为了定量研究纳米颗粒的间距对拉曼(Raman)光谱强度的影响,研制了具有高稳定性的纳米劈裂芯片及装置。利用此芯片及装置,可以获得纳米金属桥断裂后自动形成的两针状纳米电极(纳米颗粒),并且能在pm级精度上操纵两纳米电极间的距离,以观察相应拉曼光谱强度的变化。在利用两纳米电极作为增强体的基础上引入了第3纳米电极,以观察其位置对拉曼光谱信号的影响。实验结果表明,光谱信号的强度强烈依赖于3纳米电极的相对位置,第3纳米电极的引入能进一步提高增强因子,为拉曼光谱增强机制的理论研究提供了重要参考数据。
In order to better understand the enhanced Raman signal dependence on the separation between two nanoparticles,a chip for the mechanical controllable break junctions as well as high stability setup was fabricated.With such a device,two sharply tip-shape nanoelectrodes were obtained automatically after the breaking of the nano metal wire,and the gap size between the two nanoelectrodes can be adjusted in pico-meter accuracy during the Raman spectroscopy measurement.Furthermore,the third electrode was introduced based on the two tip enhanced Raman scattering.The effect of the electrode position on the Raman signal intensity was investigated.The experiment results demonstrate that the signal intensity is strongly dependent on the alignment of three nanoelectrodes,and the introduced third electrode can enhance the Raman signal further,supplying the theory investigation for the enhanced mechanism.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2012年第1期51-55,共5页
Journal of Optoelectronics·Laser
基金
国家重点基础研究发展计划(2011CB710606)
中国地质大学(武汉)中央高校基本科研业务费专项资金资助项目
关键词
分子电子
增强拉曼散射光谱
纳米劈裂技术(MCBJ)
光刻
纳米电极
molecular electronics
enhanced Raman scattering
mechanical controllable break junction（MCBJ）
lithography
nanoelectrodes
