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sol-gel法制备ZAO薄膜的结构与光学性能研究 被引量:2

Structure and optical properties of ZAO thin films prepared by sol-gel method
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摘要 采用溶胶–凝胶法在普通玻璃衬底上制备了ZAO(ZnO:Al)薄膜,利用XRD、SEM、紫外–可见光谱和光致发光光谱对所制备的AZO薄膜进行了表征,研究了ZAO薄膜的结构和光学性能。结果表明:ZAO薄膜的微晶晶相与ZnO一致,且具有c轴择优取向;ZAO薄膜在可见光区的透过率超过了88%,在350~575 nm范围内有强的发光带。随着Al掺杂量的增加,ZAO薄膜的禁带宽度变大,光吸收边出现蓝移,发射峰强度先变强后变弱;当摩尔比r(Al:Zn)为0.010时,ZAO薄膜的可见光透过率最高,达91%;发射峰强度达46.3。 Al-doped ZnO (ZAO) thin films were deposited on the ordinary glass substrate by sol-gel method. The structure and optical properties of prepared ZAO thin films were studied by using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet and visible (UV-Vis) spectroscopy, and photoluminescence (PL) spectra. The results show that ZAO thin films are featured in c-axis preferred orientation, which is consistent with the crystalline phase of ZnO. And as-prepared ZAO thin films possess strong luminescence band in the wavelength rang of 350-575 nm and exhibit an average transmittance of above 88% in the visible region. With the increase of the Al doping amount, the band-gap of ZAO films increases, the absorption edge blue shifts, and the photoluminescence intensity increases first and then decreases. Particularly, when the mole ratio of Al to Zn is 0.010, the transmittance in the visible region of the ZAO thin films reaches the highest value of at 91%; and the photoluminescence intensity reaches 46.3.
机构地区 凯里学院物理系
出处 《电子元件与材料》 CAS CSCD 北大核心 2011年第12期27-29,共3页 Electronic Components And Materials
基金 凯里学院2011年课题资助(No.Z1123)
关键词 溶胶-凝胶法 ZAO薄膜 紫外-可见光谱 光致发光(PL) sol-gel method ZAO thin films UV-Vis spectroscopy photoluminescence (PL)
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参考文献12

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