摘要
采用一种简便的方法制备出具有很好光吸收性能的黑硅材料，利用化学气象沉积和光刻的方式在硅片（100）表面形成圆形Si3N4掩膜，然后采用两种湿法刻蚀相结合方式来制备黑硅材料。首先采用碱刻蚀的方式对硅片进行各向异性刻蚀，刻蚀完成后在硅片表面形成尖锥形貌；后期利用金纳米颗粒作为催化剂，采用酸刻蚀的方式对硅片表面进行改性，在硅片表面形成多孔结构。这种黑硅材料在250～1000nm波段的光吸收率可以达到95％以上。
A simple method of preparing black silicon （BS） with high optical absorptivity is introduced. During the prepa- ration, the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon （100）, and then two kinds of wet etching are used to prepare the black silicon material. The first step is that the anisotropic etching on a silicon wafer is performed with the method of alkali etching to form the tip morphology on the silicon surface. Af- ter that, some gold nanoparticles are taken as the catalyst to modify the surface of the silicon by the method of acid etching for forming a porous structure on the silicon surface. The optical absorptivity of the black silicon can reach 95 %at the wavelength of 250~1000 nm.
出处
《现代电子技术》
2011年第18期133-136,共4页
Modern Electronics Technique
基金
国家自然科学基金资助项目(61021061)
电子薄膜与集成器件国家重点实验室开放资助基金(KFJJ200806)
关键词
黑硅材料
湿法刻蚀
表面形貌
光吸收率
black silicon material
wet etching
surface morphology
optical absorptivity
