摘要
本文研究了磁性量子元胞自动机反相器和择多逻辑门等基本逻辑电路在不同纳磁体厚度和间距下的转换特性.采用单畴近似LLG方程对纳磁体以及电路进行了建模和仿真,结果表明更厚的纳磁体需要更大的转换磁脉冲,大厚度纳磁体逻辑电路表现出较慢的转换;相同厚度和间距下,择多逻辑门比反相器的转换时间略长.此外,模拟结果还表明纳磁体间距对反相器的转换过程影响明显,而对择多逻辑门则影响较小.
In this paper, switching behaviors of MQCA inverter and majority logic gate with various nanomagnet thicknesses and spacings are studied. Single domain approximation Landau-Lifshitz-Gilbert equation is employed to model and simulate the circuits. It is shown that thicker nanomagnet needs larger switching magnetic pulse and logic circuits comprised of thicker nanomagnet demonstrate slower switching; majority logic gate needs more time to switch than inverter when they have the same nanomagnet thicknesses and spacings. Moreover, it is also shown that nanomagnet spacing has a larger effect on switching behavior of inverter than on majority logic gate.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第9期767-773,共7页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2008AAJ225)
陕西省电子信息系统综合集成重点实验室基金(批准号:201115Y15)资助的课题~~
关键词
磁性量子元胞自动机
转换特性
厚度和间距
逻辑电路
magnetic quantum cellular automata
switching behavior
thickness and spacing
logic circuit
