期刊文献+

碳纳米管电子学的研究与进展 被引量:1

CARBON NANOTUBE\|BASED ELECTRONICS
原文传递
导出
摘要 简单回顾了碳纳米管的电学性质以及各种基于碳纳米管的电子器件 ,对最新发现的碳纳米管的双极型性质也作了简单报道 ,着重讨论了由碳纳米管构成的逻辑电路 ,阐明了碳纳米管电子学发展过程将遇到的困难和挑战 ,展望了碳纳米管电子学的未来和应用前景 . The electronic properties of carbon nanotubes and several kinds of carbon nanotube\|based electronic devices are briefly reviewed, with particular mention of the recent discovery of the bipolar properties of carbon nanotubes and the carbon nanotube\|based logic circuits. Future applications and challenges are discussed.
机构地区 南京大学物理系
出处 《物理》 CAS 北大核心 2002年第10期624-628,共5页 Physics
基金 国家自然科学基金 (批准号 :90 10 10 2 1)资助项目
关键词 电子学 碳纳米管 逻辑电路 电学性质 电子器件 Carbon nanotube, electronic devices, logic circuits
  • 引文网络
  • 相关文献

参考文献18

  • 1Iijima S.Nature,1991,354:56 被引量:1
  • 2Compano R,Molenkamp L,Paul D J.Technology Roadmap for Nanoelectronics.European Commission IST Programme:Future and Emerging Technologies,Microelectronics Advanced Research Initiative 被引量:1
  • 3Wilder J W G,Venema C L,Andrew G A et al.Nature,1998,391:59 被引量:1
  • 4Tans S J,Devoret M H,Dai H J et al.Nature,1997,386:474 被引量:1
  • 5Bockrath M,Cobden D H,McEuen P L et al.Science,1997,275:1922 被引量:1
  • 6Yao Z,Postma H W C,Balents L et al.Nature,1999,402:273 被引量:1
  • 7Fuhrer M S,Nygrd J,Shih L et al.Science,2000,288:494 被引量:1
  • 8Zhou C,Kong J,Yenilmez E et al.Science,1999,290:1552 被引量:1
  • 9Tans S J,Verschueren A R M,Dekker.Nature,1997,393:49 被引量:1
  • 10Martel R,Schmidt T,Shea H R et al.Appl.Phys.Lett.,1998,73:2447 被引量:1

同被引文献51

  • 1王晓峰,黄如,傅云义,张兴.基于碳纳米管的晶体管及其集成的研究进展[J].功能材料与器件学报,2004,10(2):273-278. 被引量:7
  • 2陈卫兵,徐静平,邹晓,李艳萍,许胜国,胡致富.小尺寸MOSFET隧穿电流解析模型[J].物理学报,2006,55(10):5036-5040. 被引量:5
  • 3KRISHNAN S,KWON U,MOUMEN N,et al.A manufacturable dual channel(Si and SiGe)high-k metal gate CMOS technology with multiple oxides for high performance and low power applications[C]//Proceedings of the Electron Devices Meeting(IEDM).Washington,USA,2011:28.1.1-28.1.4. 被引量:1
  • 4HISAMOTO D.FD/DG-SOI MOSFET—a viable approach to overcoming the device scaling limit[C]//Proceedings of the Electron Devices Meeting(IEDM).Washington,USA,2001:19.3.1-19.3.4. 被引量:1
  • 5TAUR Y.CMOS design near the limit of scaling[J].IBM Journal of Research and Development,2002,46(2/3):213-222. 被引量:1
  • 6LI X,ZHU Y,CAI W,et al.Transfer of large-area graphene films for high-performance transparent conductive electrodes[J].Nano Letters,2009,9(12):4359-4363. 被引量:1
  • 7LEMME M C,ECHTERMEYER T J,BAUSM,et al.A graphene field-effect device[J].IEEE Electron Device Letters,2007,28(4):282-284. 被引量:1
  • 8KHITUN A,BAO M,WANG K L.Spin wave magnetic nanofabric:a new approach to spin-based logic circuitry[J].IEEE Transactions on Magnetics,2008,44(9):2141-2152. 被引量:1
  • 9KRUGLYAK V V,DEMOKRITOV S O,GRUNDLER D.Magnonics[J].Journal of Physics:D,2010,43(26):4001-4014. 被引量:1
  • 10HANSEN U H,DEMIDOV V E,DEMOKRITOV S O.Dualfunction phase shifter for spin-wave logic applications[J].Applied Physics Letters,2009,94(25):2502-2504. 被引量:1

引证文献1

二级引证文献1

;
使用帮助 返回顶部