摘要
阈值退化是器件特性退化最重要的表征.本文以研究SOISONOSEEPROM器件的前栅和背栅阈值电压在辐照环境下的漂移为入手点,深入研究了在辐照情况下器件的退化;并从物理能带和载流子漂移的角度,分析了导致阈值电压漂移的物理机理,提出了提高器件性能的措施.
Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第9期759-766,共8页
Acta Physica Sinica
基金
极大规模集成电路制造装备及成套工艺国家科技重大专项(批准号:2009ZX02306-04)资助的课题~~
