摘要
介绍了两种测量半导体材料载流子双极迁移率的原理和方法。用载流子漂移实验方法测量了ｎ型Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２）材料在８０Ｋ时的双极迁移率，讨论了测量条件对双极迁移率的影响。
The drift mobility of excess minority carriers in semiconductor is a fundamental material parameter. Two methods of measuring the bipolar mobility are described. The bipolar mobility of a prototype HgCdTe SPRITE detector operating in 8～14μm at 80K is determined with Shockley-Haynes method. The effect of measurement condition on the bipolar mobility is discussed.
出处
《红外技术》
CSCD
1995年第5期15-18,14,共5页
Infrared Technology
