摘要
采用真空蒸镀方法,制备了以N-BDAVBi为发光层的高效率非掺杂蓝色有机电致发光器件,器件的结构为ITO/2T-NATA(40 nm)/NPB(10 nm)/N-BDAVBi((3+d)nm)/ADN(7 nm)/N-BDAVBi((3+d)nm)/ADN(7 nm)/Alq3(30 nm)/LiF(0.5 nm)/Al.通过调整N-BDAVBi层的厚度,研究了器件的发光性能.结果表明,当N-BDAVBi的厚度为7 nm时,器件在6 V电压下的电流效率最大,为4.38 cd/A;当N-BDAVBi的厚度为11 nm时,器件在13 V电压下的亮度最大,为13 200 cd/m2.该组器件的色坐标在0～13 V时均位于蓝光区域.
High efficient undoped blue organic light-emitting devices（OLEDs） with a typical structure of ITO/2T-NATA（40 nm）/NPB（10 nm）/N-BDAVBi（（3＋d） nm）/ADN（7 nm）/N-BDAVBi（（3＋d） nm）/ADN（7 nm）/Alq3（30 nm）/LiF（0.5 nm）/Al were prepared by means of thermal vacuum deposition method with N-BDAVBi as the emitting layer.The results show that the device has a maximum luminous efficiency of 4.38 cd/A at 6 V when the thickness of N-BDAVBi layer is 7 nm,and the device has a maximum luminance of 13 200 cd/m2 at 13 V when the thickness of N-BDAVBi layer is 11 nm.The CIE coordinates of the device are within the blueregion when the voltage changes from 0 V to 13 V.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2011年第4期760-763,共4页
Journal of Jilin University:Science Edition
基金
国家自然科学基金(批准号:60978059)
江苏省研究生创新计划项目(批准号:CX09B_193Z)
