摘要
This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation.In order to improve its radiation tolerant abilities,circuit-level and device-level RHBD（radiation-hardening by design） techniques were employed.Adaptive slope compensation was used to improve the inherent instability.The H-gate MOS transistors,annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose.A boost converter was fabricated by a standard commercial 0.35μm CMOS process.The hardened design converter can work properly in a wide range of total dose radiation environments,with increasing total dose radiation.The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.
This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation.In order to improve its radiation tolerant abilities,circuit-level and device-level RHBD（radiation-hardening by design） techniques were employed.Adaptive slope compensation was used to improve the inherent instability.The H-gate MOS transistors,annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose.A boost converter was fabricated by a standard commercial 0.35μm CMOS process.The hardened design converter can work properly in a wide range of total dose radiation environments,with increasing total dose radiation.The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.
基金
Project supported by the National Defense Pre-Research Project of China(No.51311050202)
