摘要
介绍了GaAs MMIC(GaAs microwave monolithic integrated circuit)工艺运用监测技术控制工艺过程,实时掌握工艺状况,保证产品的一致性、可重复性和可靠性。针对薄层电阻和接触电阻的阻值以及器件的栅阻和栅长等工艺过程中关键的参数,分别用范德堡结构、开尔文结构和十字桥结构进行监测。采用范德堡结构测得薄层电阻Rs=(π/ln 2)V14/I23,开尔文结构得到接触电阻Rc=V13/I24,十字桥结构可以了解栅阻和栅长。然后通过运用统计过程控制技术对数据进行分析,可以有效改进工艺,提高产品质量。
Process monitor structures applied to control process and master process status realtimely was introduced in the process of GaAs MMIC for ensuring consistency,repeatability and reliability of the products.Some important parameters in the process such as the resistance of sheet resistance and contact resistance gate dimension and gate resistance of device were monitored by van der Pauw,Kelvin and cross-bridge structures respectively.The result is as follow： sheet resistance Rs =（π/ln 2）V14/I23 by van der Pauw and contact resistance Rc=V13/I24 by Kelvin,gate dimension and gate resistance were got by cross-bridge.It is effective to improve process abnormities and product quality analyzing data with SPC.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第7期520-523,共4页
Semiconductor Technology
关键词
GAASMMIC
工艺监测
薄层电阻
十字桥
统计过程控制
GaAs microwave monolithic integrated circuit（GaAs MMIC）
process monitor（PM）
sheet resistance
cross-bridge
statistical process control（SPC）
