摘要
制备了一种用于有源矩阵液晶显示、具有对称结构的MIM薄膜二极管 ,其中Ta2 O5膜采用溅射 /阳极氧化两步法工艺制成。对绝缘膜进行真空热处理 (一步热处理 )和经真空热处理后再进行大气热处理 (真空 /大气两步热处理 )。用原子力显微镜和透射电子显微镜分析了Ta2 O5膜的微结构 ,测试了MIM薄膜二极管的I U特性曲线。讨论了热处理对Ta2 O5绝缘膜微结构和MIM薄膜二极管I U特性的影响 ,并指出了MIM薄膜二极管I
A MIM thin film diode with Ta Ta 2O 5 Ta symmetrical structure for active matrix LCD was introduced in this paper.The Ta 2O 5 insulator layer of the MIM thin film diode was formed by anodizing sputtered tantalum oxide film (sputtering/anodization two step process).Ta 2O 5 film deposited was heat treated by two methods.The one is that the sample was heat treated in the vacuum (one step heat treatment),and the other is that the sample was heat treated first in the vacuum and then in the atmosphere (vacuum/atmosphere two step heat treatment).The microstructure of tantalum oxide film was analyzed by Atomic Force Microscope and Transmitting Electron Microscope.The I U characteristics of the MIM thin film diode were also measured.The influence of heat treatment on microstructure of Ta 2O 5 insulator film and the I U characteristics of the MIM thin film diode was discussed.The relationship between the I U characteristics of the MIM thin film diode and microstructure of Ta 2O 5 film was also indicated.
出处
《真空科学与技术》
CSCD
北大核心
1999年第6期461-465,共5页
Vacuum Science and Technology
基金
江苏省应用基础资助课题! (编号BJ970 1 6 )
