摘要
本文利用椭圆偏振光谱法测量了用ＭＯＣＶＤ方法在ＧａＡｓ衬底上生长的ＡｌＧａＩｎＰ及ＡｌＧａＩｎＰ掺Ｓｉ两个样品，在可见光区室温下的光学常数，求得吸收系数、介电函数随光子能量的变化关系。用有效介质近似理论（ＥＭＡ）和线性内插法计算了样品中Ａｌ的组分，并与Ｘ射线微区分析法（能谱法）的测量结果加以比较。
Optical constants of Al xGa 0.51-x In 0.49 P and that doped by Si prepared by MOCVD on the GaAs substrates were measured by using the ellipsometric spectroscopy in the visible light region at room temperature.Dependence of the absorption coefficients and dielectric functions for two samples on the photon energy were obtained.The Al composition was calculated by using EMA and linear interpolation,and the results was compared with that obtained by the energy spectrum method.Three results were consistent with each other.
出处
《光电子．激光》
EI
CAS
CSCD
1999年第5期415-418,共4页
Journal of Optoelectronics·Laser
基金
"八六三"计划资助
关键词
椭偏光谱
有效介质近似
四元半导体
ellipsometric spectroscopy
effective medium approximate theory
linear interpolation
energy spectrum method
