摘要
本文用线性插值和介电常数的计算模型，得到了ＧａＩｎＡｓＳｂ 四元系２．４μｍ探测器材料的组份及其折射率。将传统的ｐｉｎ ＧａＩｎＡｓＳｂ 探测器结构置于两组ＡｌＡｓＳｂ／ＧａＳｂＢｒａｇｇ 反射镜之间，可以得到接近１ 的量子效率。本文用传递矩阵方法（ＴＭＭ） 计算了ＡｌＡｓＳｂ／ＧａＳｂ Ｂｒａｇｇ 反射镜的反射率与波长及反射镜个数的关系，并对探测器的结构进行了设计，讨论了吸收系数与波长的函数关系对探测器量子效率所产生的影响。
The composition and refractive index of GaInAsSb quaternary semiconductor material for photodetector operating at 2.4μm are obtained by using interpolation and models of dielectric function. By putting the conventional p i n structure of GaInAsSb photodetector between two groups of Bragg reflective mirrors, nearly unit quantum efficiency can be reached. Transfer Matrix Method (TMM) is used to calculate the reflectivity of AlAsSb/GaSb Bragg mirrors as a function of wavelength and the number of mirrors. The structure of RCE detector is determined and the influence of the changes of absorption with wavelength on the quantum efficiency is also discussed.
出处
《功能材料与器件学报》
CAS
CSCD
1999年第3期169-174,共6页
Journal of Functional Materials and Devices
关键词
共振腔增强
反射率
量子效率
设计
光电探测器
Resonant cavity enhanced detector, Reflectivity, Quantum efficiency
