摘要
设计了一种从衬底入射的共振腔增强型GaInAsSb/GaSb光电探测器结构。在这种结构中,上反射镜是由9.5～15.5个周期的InAs/GaSbQWS组成,下反射镜由3个周期的SiO2/SiQWS组成。器件上表面镀有一层高透射率的抗反射层。计算表明,在设计的工作波长2.4mm,器件可以获得大约(91～88)%的量子效率。在2～2.9mm波长范围器件的量子效率有两个峰,这使得器件可以作为双色探测器来工作。
The structure of RCE GaInAsSb/GaSb photodetector that the light is incident from the substrate has been designed. The top reflector for this structure is made of 9.5～15.5 periods InAs/GaSb quarter wave stacks (QWS) and the bottom reflector is composed of three periods SiO2/Si QWS. The antireflection coating with more than 99% transmissivity is deposited on the substrate surface. The simulation shows that the quantum efficiency could be more than or nearly to 90% at design wavelength 2.4 μm. The device has two spectral response peaks, which could make the device as double-color detector.
出处
《红外技术》
CSCD
北大核心
2004年第4期69-72,共4页
Infrared Technology
基金
国家自然科学基金资助项目(60177014
50072030
50132020)
