摘要
本文报导了用 MOCVD 技术研制透明导电 SnO_2多晶膜的结果。成膜用的物质源为四甲基锡(CH_3)Sn,使其在被加热到430℃的衬底基片上与氧源及掺杂物质(P、As、F)混合进行热分解氧化反应,得到了三种不同掺杂的 SnO_2膜。它们的薄层电阻值为30～40Ω/□,可见光区的透光率达80～90%。其中掺 P 的 SnO_2可见光透过率达95%,接近未掺杂情况。As、F 的掺杂则使透光率受到损失,但仍可达80%以上。实验指出:掺杂将引起 SnO_2的结晶取向发生变化,过量的掺杂还将使膜层由多晶转变为非晶态。本文给出了三种掺杂的最佳成膜条件,可以得到优质的透明导电 SnO_2膜层。成膜层设备简单,易获得较大面积的膜层。
In this paper,we report the transparent and conductive SnO_2 polycrystallinefilms prepared by MOCVD technique.Using (CH_3)_4 Sn as Sn source,O_2-N_2 mixtureas the carrier gas,P,As or F as dopants,we have obtained three kinds of SnO_2films on the substrate at 430℃.These films(thickness～1500(?))possess sheet resistances of 30-40Ω/□,andtransmissivities up to 80-90% in the visible spectral region.The transmissivity of P-doped SnO_2 polycrystalline films is up to 95% in thevisible spectral region,and it is similar to that of the undoped film.However thetransmissivity of As- or F-doped film is less than that of the undoped film.The experiments show that the doping will cause the change of the orientationof SnO_2 crystallites.The film can exhibit a rapid transition from polycrystallineto amorphous when the excess dopant is used.In this paper optimal deposition conditions for the three kinds of films withsuperior quality are given.A transperent and conductive film with a quite largearea can be obtained easily.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第2期185-188,共4页
Journal of Inorganic Materials
关键词
二氧化锡
薄膜
化学气相沉积
Metal-organic chemical vapor deposition
Stannic oxide film
Doped film
