摘要
本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器。利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜的厚度进行了定标。分别测量了不同厚度的处Au/ZnO/n+-Si结构的I-V特性曲线,从而得到了阈值电压与ZnO薄膜厚度之间的关系。结果表明:随着ZnO薄膜厚度的增加,Au/ZnO/n+-Si压敏电阻器的阈值电压线性增大。因此,可以通过控制ZnO层的厚度精确控制压敏电阻器的阈值电压。
In this paper,a series of ZnO layers with various thicknesses were deposited on heavily doped n-type silicon（100） wafer by DC magnetron sputtering and a set of masks.An Au coated probe and the ZnO/n＋-Si form a series of Au/ZnO/n＋-Si structured varistors each with a different ZnO layer thickness.The microstructure of the ZnO films was studied by X-ray diffraction（XRD）,which indicates that ZnO thin films have good crystalline quality with strong c-axis（0002） orientation.UV-Vis transmission spectrum was employed to calibrate the deposition rate of ZnO thin film.Then the I-V curves of the Au/ZnO/n＋-Si were measured,and threshold voltages of the Au/ZnO/ n ＋-Si structure with various thickness of ZnO layer were deduced.The results show that the threshold voltage of the Au/ZnO/ n ＋-Si structure increases linearly as the thickness of the ZnO layer increases.Therefore,it＇s possible to finely tune the threshold voltages of thin film varistors.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2011年第2期179-182,150,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金(No.60576063)
浙江省科技计划(2008F70015
2009C31007)
