摘要
使用化学气相沉积法,利用硫化锌和硫化镉作为反应源,直接合成了三元系Cd1-xZnxS亚微米管。用X射线粉末衍射仪、场发射扫描电镜、透射电镜、X射线能谱分析、荧光光谱等手段对这些结构进行了表征。结果显示合成的产物是具有六方结构的Cd1-xZnxS多晶亚微米管,亚微米管的直径在1-4μm,管壁厚约300 nm。光致发光光谱显示该产物的发光峰与纯CdS相比发生了蓝移。
In this study,Semiconductor Cd1-xZnxS submicrotubes have been directly synthesized by a simple chemical vapor deposition process using ZnS and CdS powders as the starting materials.Scanning electron microscopy（SEM）,transmission electron microscopy（TEM）,X-ray diffraction（XRD）,energy dispersive X-ray spectrum（EDXS） and photoluminescence（PL） were employed to characterize the morphology,microstructure,compositions,and Photoluminescence modes of the products.It is found that the polycrystal ternary Cd1-xZnxS submicrotubes are highly crystallized in wurtzite structure with diameter of 1-4 μm and an average wall thickness of 300 nm.The PL of Cd1-xZnxS submicrotubes show small blue shifts compared to that of CdS.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2011年第2期130-135,共6页
Journal of Functional Materials and Devices
关键词
化学气相沉积
发光
亚微米管
Chemical vapour Deposition
Luminescence
Submicrotubes
