摘要
在对自蔓延高温合成方法制得的ＡＩＮ 晶须形态研究的基础上，采用高分辩电镜等技术，对ＡＩＮ晶须进行了生长机理研究，结果表明，晶须头部的小液滴显示氮化铝晶须可由ＶＬＳ机制生成。光滑晶须头部的出现、过饱和度与晶须直径的关系、侧面的二次生长、生长台阶的出现，这些都说明ＶＳ机制在起作用。虽然在ＡＩＮ晶须中发现层错和位错，但经过分析认为，它们都不是氮化铝晶须的生长机制。
On the base of the study of microstructure of AlN whiskers by SHS(self propagation high temperature synthesis) method, the mechanisms of AlN whiskers was investigated using the high resolution electron microscopy. The droplet on the top of whiskers shows that AlN whiskers can be grown via VLS mechanism. Moreover, thesmooth droplet, the relation of supersaturation and the diameter of whiskers, secondary growth sites on the sides of the whiskers, growth stepdemonstrates the function the VS mechanism. Although dislocations and stacking faults were found in the whiskers, they are not the growth mechanism of AlN whiskers through analyzing.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第4期387-391,共5页
Journal of Synthetic Crystals
关键词
自蔓延高温合成
氮化铝
晶须
生长机理
形态
self propagation high temperature synthesis, aluminum nitride,whiskers,growth methanism
