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(Li,Cu)掺杂ZnO薄膜的发光性质 被引量:3

Luminescence Properties of (Li,Cu)-doped ZnO Thin Films
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摘要 利用溶胶-凝胶(Sol-gel)法在n型Si(100)衬底上制备(Li,Cu)掺杂ZnO薄膜,研究了室温下薄膜的结构、形貌和光致发光性能。研究结果表明,随着Li掺杂浓度的增加,可见光发光强度增加,可见光发射可能是源于单电离氧空位到价带顶以及单电离氧空位到Li替位Zn(LiZn)受主跃迁的双重作用。与此类似,Cu掺杂ZnO薄膜黄绿光部分可能是源于单电离氧空位到价带顶以及单电离氧空位到Cu替位Zn(CuZn)受主跃迁的双重作用。随着Cu掺杂量的增加,单电离氧空位到Cu替位Zn(CuZn)受主的跃迁起主导作用。 (Li,Cu)-doped ZnO thin films were prepared on the n-type Si(100) substrate by means of sol-gel process.The structure,surface morphology and photoluminescence properties of the ZnO films were investigated.The results show that all of ZnO thin film samples have strong c-axis preferred orientation.The visible luminescence intensity of Li-doped ZnO films increases with the dopant concentration.The visible light emission can be attributed to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and LiZn acceptor states.Similarly,the yellow-green emission might be due to the incorporation of transitions derived from the singly ionized oxygen vacancy to the top of valence band and CuZn acceptor states.With the increase of Cu dopant concentration,the transition of singly ionized oxygen vacancy to CuZn acceptor states plays a dominative role.
出处 《发光学报》 EI CAS CSCD 北大核心 2011年第3期245-250,共6页 Chinese Journal of Luminescence
基金 扬州大学创新培育基金(2007CXJ002 2009CXJ002 2010CXJ004)资助项目
关键词 ZNO薄膜 (Li Cu)掺杂 光致发光 ZnO thin films (Li Cu) doping photoluminescence
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