摘要
在直角散射配置下测量了纳米硅样品的拉曼散射谱及其退火温度的关系。结果表明，在８００℃以下退火的样品只观察到单晶硅衬底的光学声子模，在９００℃以上退火，才观察到纳米硅的特征拉曼散射峰。在１２００℃下退火后，纳米硅的特征拉曼散射峰消失，观察到类似于非晶硅的光学声子特征峰，可能表示纳米硅不能承受这样的高温热退火。这些结果进一步证实了光致发光谱的结果。
Raman scattering spectra of silicon nanocrystals and their dependence on thermal annealing have been measured at the right angle scattering configuration. The results show that only optical phonon mode from Si substrate was observed below the annealing temperature of 800℃. And the characterized scattering peak of silicon nanocrystals was observed when the annealing temperature is higher than 900℃. After the thermal annealing of 1200℃ the characterized scattering peak of silicon nanocrystals was disappeared and optical phonon peak of a Si was observed, we suppose that Si nanocrystals can not bear the thermal annealing at 1200℃. These results prove further those of photoluminescence spectra.
出处
《光散射学报》
1999年第3期231-234,共4页
The Journal of Light Scattering
基金
国家自然科学基金
关键词
纳米硅
离子注入
热退火
拉曼散射
Si nanocrystal
Ion implantation
Thermal annealing
Raman scattering
