摘要
采用国际通用的方法,测定了不同类型的用高压LEC法生长的InP单晶样品的整片位错分布,直观显示位错密度在晶片上的分布情况,分析了EPD分布结果和原因,说明单晶生长工艺和掺杂剂等因素对其产生影响。从数值看,一般掺S的材料位错密度较低,随着掺杂浓度的增加位错密度明显降低,晶片的均匀性也越好。掺Fe的材料位错密度一般,但随着掺杂量的增大位错密度升高,晶片的位错分布也不均匀。非掺杂材料的位错一般较多,但均匀性较好。通过工艺改进可以明显降低位错,为今后进一步开展晶体完整性研究、改进工艺、提高单晶质量打下了良好的基础。
Using the generally international method,the distribution of EPD on different kinds of InP single crystal wafers grown by HP-LEC technique were measured,and the dislocation density distribution was clearly revealed.The causes and the results of the EPD distribution were analyzed.The analysis results show that the EPD distribution is influenced by the process conditions and the dopants.Based on the numerical value,the EPD of the S-doped materials is lower gene-rally.The EPD decreases obviously with the increase of the doping concentration and the uniformity of the wafers is better.The EPD of the Fe-doped materials is general,but the EPD increases with the increase of the doping content,and the dislocation distribution of wafers is nonuniform.The dislocation of the undoped materials is more,but the uniformity is better.The dislocation is decreased obviously through improving the process,which can provide a good foundation for the further researches and improvement of InP single crystals.
出处
《微纳电子技术》
CAS
北大核心
2011年第3期199-202,共4页
Micronanoelectronic Technology
基金
国家自然基金资助项目(61076004)
浙江省公益技术研究工业项目(2010C31118)
