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基于温度变化的量子阱红外探测器研究

Study on Quantum Well Infrared Photo-detector based on Temperature Change
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摘要 量子阱红外探测器受到温度、压强等多种因素的影响,本文主要从温度方面进行了研究。在文献[2]的基础上,进一步推导了超晶格中热应变与温度的关系;结合量子阱红外探测器的能级公式以及波长与能级差的关系式,定量地分析了温度变化对量子阱红外探测器探测峰值波长的影响。 Quantum well infrared photo-detector was influenced by many factors such as temperature,pressure and so on.This paper makes a study on the influence of temperature mainly.Based on the paper [2],we derive the realitionship between the thermal strain and temperature in superlattice.Then combining energy level formula of quantum well infrared photo-detector with the relational expression of wavelength and energy level difference,we do quantitative analysis about the influence on detect peak wavelength of quantum well infrared photo-detector from tempereature.
机构地区 中北大学物理系
出处 《光机电信息》 2011年第2期17-19,共3页 OME Information
关键词 量子阱红外探测器 超晶格 热应变 quantum well infrared photo-detector superlattice thermal strain
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  • 1Sarusi G. QWIP or other alternative for third generation infrared systems[J].Infrared Physics &Technol. , 2003, 44:439-444. 被引量:1
  • 2Kinch M A, Yariv A. Performance limitations of GaAs/AlGaAs infrared superlattices[J].Appl. Phys. Lett. ,1989, 55(20): 2093-2095. 被引量:1
  • 3Adachi S. GaAs, AlAs, and AlxGa1-x As: material parameters for use in research and device applications [J]. J. Appl. Phys., 1985,58(3):R1-29. 被引量:1
  • 4Levine B F,Bethea C G, Shen V O, et al. Tunable long-wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy[J]. Appl. Phys. Lett. , 1990, 57 (4) :383-385. 被引量:1
  • 5[1]WEN T D, ANASTASSAKIS E. Temperature dependence of strains and stresses in undercritical cubic superlattices and heterojunctions[J]. Physical Review B, 1996,53( 8):4741. 被引量:1
  • 6[2]KONTOS A G, ANASTASSAKIS E, HRYSANTHAKOPOULOS N C. Strain profiles in overcritical(001) ZnSe/GaAs heteroepitaxial layers[J]. J Applied Physics, 1999, 86(1):412. 被引量:1
  • 7[3]LU Y Q ,ZHU Y Y , CHEN Y F. Optical properties of an ionic-type phononic crystal[J]. Science, 1999, 284, 1822. 被引量:1
  • 8[4]WEN T D , XU L P, ANASTASSAKIS E. On the piezoelectric signals of multilayer systems[J].Phys Stat Sol (a), 2000, 177: 467. 被引量:1
  • 9[5]FUNATO M, FUJITA S, FUJITA S. Energy states in ZnSe-GaAs heterovalent quantum structures[J]. Phys Rev B,1999, 60(24): 16652. 被引量:1
  • 10[6]OMAE K, KAWAKAMI Y, FUJITA S. Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer[J]. Phys Rev B,65,73308 被引量:1

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