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一种新型力电耦合超晶格半导体结构研究 被引量：2

A New Electric-mechanical Coupled Study on Superlattice Structure in Semiconductors
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摘要 采用分子束外延方法在GaAs衬底(001)上生长了AlAs/GaAs双势垒超晶格薄膜结构,测试出超晶格薄膜在室温下随着外加压力变化下,其I-V特性曲线的漂移与外加压力成一定比例关系。为基于MEMS共振隧穿效应的力电耦合传感器的研究提供了一定的基础。 Double potential barrier superlattiee quantum membrane made from AlAs/GaAs has been grown through molecular beam epitaxy technology on （001）-oriented GaAs substrates. Pressure-dependent current-voltage characteristics of superlattice film were studied in room temperature. Measured results show that the drift of I-V curve is proportional to the applied force. It provides a basis of research for electric-mechanical coupled transducer based on resonant tunneling effect.
作者 张斌珍 李科杰 张文栋 薛晨阳
机构地区 北京理工大学机电工程学院 中北大学电子测试技术国家重点实验室
出处 《兵工学报》 EI CAS CSCD 北大核心 2007年第2期178-181,共4页 Acta Armamentarii
基金 国家自然科学基金资助项目(50405025 50375050)
关键词 半导体技术 力电耦合 共振隧穿效应 超晶格薄膜 semiconductor electric-mechanical coupled effect resonant tunneling effect superlattiee film
分类号 TN304.23 [电子电信—物理电子学] TG156 [金属学及工艺—热处理]
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参考文献9

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共引文献40

同被引文献17

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引证文献2

二级引证文献10

兵工学报
2007年 第2期

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