摘要
采用溶胶凝胶法制备了LaMnOx(LMO)薄膜,系统研究了不同烧结温度、纵向直流磁场后退火和生长膜层数对LMO薄膜的巨磁阻抗效应的影响。结果表明,烧结温度、膜的层数以及纵向磁场后退火处理均有效提高了LMO的巨磁阻抗比,其中纵向直流磁场后退火处理提高薄膜阻抗比效果最显著,经过10Oe、400℃恒温1h磁场后退火处理后,在频率5MHz、100Oe外磁场下其磁阻抗比达15.8%,相比未后处理样品磁阻抗比提高了一倍,其对应的磁场灵敏度为0.16%/Oe。同时,实验发现磁场后退火不仅影响薄膜的巨磁阻抗比,也会改变阻抗比极大值所对应的激励频率,这一现象目前仍在探究中。
LaMnOx（LMO）films on the substrate of Ni-W alloy were prepared by sol-gel method.The effects of the sintering temperature,longitudinal DC magnetic field post-annealing and film layers on the giant magneto-impedance（GMI）property of LMO films were studied systematically.The results show that the GMI ratio can be improved effectively by above treatment me-thods,and among which the GMI ratio of the film can be improved most obviously with longitudinal DC magnetic field post-annealing.The GMI ratio reaches about 15.8% at 5 MHz in a 100 Oe applied field after post-annealing in a 10 Oe longitudinal DC magnetic field at 400 ℃ for 1h,which is about one time higher than that of the untreated sample,and the corresponding magnetic sensitivity is about 0.16%/Oe.At the same time,it is found that the longitudinal magnetic field post-annealing affects not only the GMI ratio of LMO films,but also the corresponding stimulation frequency of the maximum for the GMI ratio,and the phenomenon is still under study at present.
出处
《微纳电子技术》
CAS
北大核心
2011年第2期103-107,127,共6页
Micronanoelectronic Technology
基金
北京市自然科学基金资助项目(1102024)
国家自然科学基金资助项目(50602027)
北京市科技新星计划资助项目(2008A020)
关键词
磁传感器
巨磁阻抗
溶胶凝胶
LaMnOx薄膜
纵向磁场后退火
各向异性
magnetic sensor
giant magneto-impedance（GMI）
sol-gel
LaMnOx thin film
longitudinal magnetic post-annealing
anisotropy
