摘要
InSb焦平面器件经过减薄后,表面有细微的划痕,且存在一定厚度的损伤层,影响芯片性能。通过对InSb焦平面器件表面末处理工艺方法的探索,确定了器件抛光后,去除表面损伤层和表面溅射ZnS抗反射膜的工艺实施方案,有效地改善了器件的表面质量,提高了焦平面器件的性能。
The performance of InSb focal plane device becomes lowed because of mild nicks and damnification after thinning. A method that the damnification layer removed and ZnS film sputtered after polishing is used through working over the treatment echnology for InSb focal plane-arrays chip surface, and the good performance of FPAS is gained.
出处
《红外技术》
CSCD
北大核心
2011年第2期96-99,共4页
Infrared Technology
关键词
焦平面器件
腐蚀
抗反射膜
focal plane device, corrosion, antireflection layer
